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Jiangsu GuanLong Integrated Technology Co., Ltd. Unveils Full-Range High-Performance MOSFET Portfolio

2026-08-28

Covers 12V to 650V voltage ratings, empowering new energy, industrial power, and automotive electronics with enhanced efficiency

[Jiangsu, China – August 28, 2026] – Jiangsu GuanLong Integrated Technology Co., Ltd., a rising player in the domestic power semiconductor industry, today announced the launch of its next-generation MOSFET product family. The portfolio spans three advanced technology platforms – traditional Trench (TR), Shielded-Gate Trench (SGT), and Super Junction (SJ) – encompassing over 100 part numbers. These devices deliver industry‑leading performance in on‑resistance, switching speed, ESD ruggedness, and thermal management, making them ideal for photovoltaic storage, electric vehicles, fast chargers, server power supplies, and industrial motor drives.

Three Technology Platforms for Diverse Power Needs

  • TR Series (Standard Trench) – Offered in both N‑channel and P‑channel options, with voltage ratings from 12V to 100V and continuous current up to 160A. This series excels in cost‑effectiveness and reliability, targeting consumer power supplies, battery protection circuits, and low‑voltage motor control. Key models such as 30N4 (30V/160A) and 20P150 (–20V/–2A) are already in mass production (MP).

  • SGT Series (Shielded‑Gate Trench) – Leveraging advanced shielded‑gate technology, these devices significantly reduce Miller capacitance and on‑resistance (RDS(on)). In the 30V–150V mid‑voltage range, they achieve superior switching performance. For example, the R6GN4A delivers a typical RDS(on) of just 0.5 mΩ at 40V and handles 320A, meeting the stringent low‑loss requirements of high‑power‑density DC‑DC converters and lithium‑battery protection boards. Many SGT models include built‑in ESD protection for enhanced system robustness.

  • SJ Series (Super Junction) – Focused on high‑voltage applications, this series covers 650V with on‑resistance as low as 95 mΩ (D4SN65AF) and current capability up to 35A. Manufactured using multi‑epitaxial super‑junction technology, these devices maintain low switching losses even at high voltages. They are ideal for server power, industrial chargers, and photovoltaic inverters. Mainstream models like 650SJ1D6 and 650SJ3D0 are in stable mass production, while select high‑spec versions (e.g., AU26SN65AF) are available as samples for early customer validation.

Key Performance Highlights

  • Ultra‑Low On‑Resistance – Several SGT products feature typical RDS(on) below 1 mΩ, helping to reduce system temperature rise and conduction losses.

  • Broad Voltage/Current Coverage – From 12V low‑voltage logic‑level drive to 650V high‑voltage applications, the portfolio provides a one‑stop solution for diverse voltage rails.

  • Flexible Packaging – All devices are supplied in wafer form (WFR), enabling customized module integration and back‑end assembly.

  • Mass‑Production Ready – Models marked “MP” have passed full reliability qualification and are available in volume; “Sample” parts can be requested for design‑in and prototyping.

Market and Application Outlook

With global carbon‑neutrality goals driving demand for higher efficiency and power density, Jiangsu GuanLong Integrated Technology’s expanded product line helps customers achieve better cost‑performance ratios in OBC (on‑board chargers), photovoltaic MPPT, communication power, and other applications. The company has already established cooperative relationships with several leading power‑supply manufacturers and maintains competitive lead times.

Executive Comment

A spokesperson for Jiangsu GuanLong Integrated Technology Co., Ltd. commented: “We are committed to providing local and global customers with power devices that match international performance standards while offering agile, local support. This comprehensive product launch demonstrates our system‑level capabilities in wafer design, process engineering, and test packaging. We will continue to invest in R&D and extend our roadmap toward higher‑voltage, lower‑loss next‑generation solutions.”

About Jiangsu GuanLong Integrated Technology Co., Ltd.

Jiangsu GuanLong Integrated Technology Co., Ltd. is a dedicated semiconductor company specializing in the design and sales of power discrete devices, including MOSFETs, IGBTs, and SiC‑based products. Leveraging the strong industrial ecosystem of the Yangtze River Delta, the company delivers high‑value power conversion solutions to customers across new energy, industrial, and automotive sectors.


Quick Reference – Representative Products (Partial List)

Series Part Number VDS (V) ID (A) RDS(on) Typ. (mΩ) Key Feature
TR 30N4 30 160 1.8 Ultra‑low RDS, high current
SGT R6GN4A 40 320 0.5 Shielded‑gate, high ESD
SGT 100SG1D9 100 219 2.6 High voltage, medium current
SJ D4SN65AF 650 35 95 Super junction, high efficiency