Leave Your Message

GL Chips Unveils 2kW GaN-based Bidirectional Converter, Setting New Benchmark for Power Density and Efficiency

2025-11-25

GL Chips Unveils 2kW GaN-based Bidirectional Converter, Setting New Benchmark for Power Density and Efficiency

Xi'an, China – GL Chips, a pioneering force in advanced power semiconductor solutions, today announced the release of its groundbreaking INNDAD3K0A1 reference design: a 2kW, 48V Bidirectional Converter engineered for next-generation portable energy storage and industrial power systems. This demo showcases the superior performance of GL Chips' GaN (Gallium Nitride) technology, achieving peak efficiencies over 96% and a remarkable power density that enables smaller, more powerful, and more efficient designs.

GaN Power Electronics for Energy Storage

Unmatched Performance for Demanding Applications

The INNDAD3K0A1 reference design sets a new industry standard with its exceptional performance metrics:

  • Peak Efficiency of 96.1% in Rectifier Mode (AC to DC conversion).

  • Peak Efficiency of 96.0% in Inverter Mode (DC to AC conversion).

  • High Power Density of 2.447 W/in³, achieved with a compact PCBA size of 248mm x 120mm x 45mm.

This combination of high efficiency and compact form factor is critical for applications like portable power stations, solar energy storage systems, and bidirectional industrial power supplies, where every percentage point of efficiency and every cubic inch of space count.

Engineered with Advanced GaN Technology

The reference design leverages an advanced "Totem-Pole PFC + Isolated Full-Bridge LLC" topology, made possible by the fast-switching capabilities of GL Chips' GaN FETs. Key devices include the INN650TA030C (650V, 26mΩ) for the PFC stage and the INN650TA050C (650V, 50mΩ) for the LLC stage, operating at 65kHz and 200kHz respectively.

Compared to traditional silicon-based MOSFETs, GL Chips' GaN technology offers decisive advantages:

  • Extremely Low Gate Charge (Qg): Reduces switching and driver losses.

  • Zero Reverse Recovery (Qrr): Enables highly efficient operation in continuous conduction mode (CCM) totem-pole PFC, a challenge for silicon.

  • Lower Output Capacitance (Coss): Minimizes dead-time requirements and enables higher frequency operation.

These characteristics are fundamental to achieving the design's record-breaking efficiency and power density.

Comprehensive Design Support for Rapid Market Adoption

GL Chips provides extensive documentation to accelerate customer design cycles, including a detailed demo manual with:

  • Complete schematic and BOM (Bill of Materials).

  • PCB layout guidelines for optimal thermal and EMI performance.

  • Key design considerations for GaN gate driving and thermal management.

  • Comprehensive test results, including efficiency curves and thermal imaging under full load.

Target Applications:

  • Portable Energy Storage Systems

  • Solar Inverters and Micro-inverters

  • Bidirectional AC-DC Power Supplies

  • Industrial Power Systems

Availability

The INNDAD3K0A1 2kW Bidirectional Converter Reference Design is now available for evaluation and licensing. For more information and to request the demo manual, please visit the GL Chips website.

About GL Chips:

GL Chips is a leading manufacturer and supplier of high-performance power semiconductors, cutting-edge radio frequency (RF) solutions, and high-fidelity MEMS and inertial sensors. The company is dedicated to delivering robust, innovative technology that powers the critical systems of tomorrow, from consumer electronics to aerospace and defense.