New 1200V High-Power Silicon Carbide (SiC) Schottky Diode Released for Next-Gen Power Electronics

Engineering Highlights and Performance

Designed to operate in harsh industrial environments, the new SiC diode combines a robust 1200V repetitive peak reverse voltage ($V_{RRM}$) with a maximum operating junction temperature of up to ${175}^{\circ }C$. Key technological benefits include:

Zero Recovery Loss

Featuring a Schottky barrier structure, the component exhibits zero reverse recovery current and zero forward recovery current, effectively eliminating switching losses.

Thermal and Switching Stability

The device offers temperature-independent switching behavior, a positive temperature coefficient, and a low forward voltage drop (${\mathrm{<br>}}_{\mathrm{<br>}}$ of 1.40V typ. at $T_j={25}^{\circ }C$), making high-frequency operations significantly more stable.

Optimized Thermal Footprint

With a low junction-to-case thermal resistance (RθJ−C​) of ${0.21}^{\circ }C\mathrm{<br>}$ per device, the diode helps engineers substantially reduce heat sink requirements and minimize electromagnetic interference (EMI).

Empowering High-Density Applications

The rollout of the 1200V SiC Schottky diode provides power system designers with a reliable component for high-power-density architectures. Target applications span across multiple fast-growing sectors:

Electric Mobility

• On-board chargers (OBC)

• High-voltage electric vehicle charging piles

Clean Energy

• Solar photovoltaic inverters designed for maximum green energy harvesting efficiency

Industrial Infrastructure

• Power factor correction (PFC) circuits

• Uninterruptible power supplies (UPS)

• High-efficiency motor drives

Conclusion

The introduction of this advanced wide-bandgap device offers engineers a robust pathway toward higher conversion efficiency, smaller form factors, and extended operational lifespans in next-generation power electronics design.