INN040FQ043A: 40V Enhanced-Mode GaN Power Transistor
Products Description
The INN040FQ043A is a state-of-the-art 40V Gallium Nitride (GaN) Enhanced-Mode High Electron Mobility Transistor (E-HEMT) designed to revolutionize power conversion efficiency and density. Built on an advanced 8-inch GaN-on-Si platform and housed in a compact FCQFN 4x3mm package, this transistor delivers exceptional performance for the most demanding applications.
With an ultra-low combination of on-resistance and gate charge, the INN040FQ043A enables significantly higher switching frequencies and reduced losses compared to traditional silicon-based MOSFETs. This allows designers to create smaller, cooler, and more efficient power solutions.
Key Features & Specifications
|
Parameter |
Value |
Condition |
|
Drain-Source Voltage (VDS) |
40 V |
Max |
|
Continuous Drain Current (ID) |
- |
- |
|
Pulse Drain Current (IDM) |
160 A |
- |
|
On-Resistance (RDS(on)) |
4.3 mΩ |
Max @ VGS = 5V |
|
Total Gate Charge (QG) |
6.2 nC |
Typ @ VDS = 20V |
|
Output Charge (QOSS) |
14 nC |
Typ @ VDS = 20V |
|
Input Capacitance (CISS) |
- |
- |
|
Switch Node Rise Time |
- |
- |
|
Switch Node Fall Time |
- |
- |
|
Package |
FCQFN |
4mm x 3mm |
Target Applications
√ High-Frequency DC-DC Converters and Point-of-Load (POL) modules
√ 150W Car Chargers and Notebook Adapters
√ RF Envelope Tracking
√ Power Banks (Mobile Chargers)
√ Motor Drive Systems
√ Tablet PC Power Management
Proven Reliability and Robustness
The INN040FQ043A has passed a comprehensive suite of JEDEC qualification tests with zero failures, ensuring maximum reliability for your end products.
√ HTRB/LTRB: Pass @ 1000hrs
√ HTGB/LTGB: Pass @ VGS=+6V/-4V, 1000hrs
√ H3TRB/HAST/uHAST: Pass @ 85%/85%RH and 130°C/85%RH
√ Temperature Cycling (TC): Pass, 1000 cycles (-40°C to +125°C)
√ Dynamic Lifetime Test (DHTOL): Pass in a 1.2MHz Buck Converter @ Tj=125°C for 1000hrs
√ ESD Rating: HBM Class 1B, CDM Class 2a
150W Buck-Boost Reference Design
A proven reference design showcases the capabilities of the INN040FQ043A in a high-power car/notebook charger application:
√ Topology: Buck-Boost
√ Peak Efficiency: 98.1% (at VIN=24V, VOUT=19.2V/6A, Fsw=600kHz)
√ Adjustable Frequency: 400 kHz to 1200 kHz
√ Wide Output Voltage Range: 3.3V to 19.2V
This demonstrates its superior performance for creating compact, high-output power supplies.
Why Choose the INN040FQ043A?
√ Higher Power Density: Smaller magnetics and capacitors due to high-frequency operation.
√ Cooler Operation: Ultra-low RDS(on) and switching losses minimize heat generation.
√ Maximum Reliability: Extensive qualification testing ensures robust operation in harsh environments.
√ Compact Form Factor: The small FCQFN package saves valuable PCB space.
Keywords: 40V GaN FET, GaN Transistor, High Efficiency Power Converter, INN040FQ043A Datasheet, GaN vs MOSFET, DC-DC Converter Design, USB-PD Charger Design, 150W Adapter, Automotive GaN, Motor Drive IC, Power Management IC, FCQFN Package, High Frequency Switching, Low RDS(on) MOSFET, Low Gate Charge Transistor.