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A comprehensive suite of high-precision pressure and flow measurement instruments for detecting micro-leaks and managing system-wide fluid dynamics
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Power Semiconductors, Motion Sensors and Industrial Sensors

get the latest information For Our Sensors and Chips

IMU488M Tactical-Grade MEMS Inertial Measurement Unit Now Available from Jiangsu GuanLong Integrated Technology
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IMU488M Tactical-Grade MEMS Inertial Measurement Unit Now Available from Jiangsu GuanLong Integrated Technology
HM 4051/HM 9051: The High-Voltage, High-Sensitivity Unipolar Hall Sensor for Robust Industrial Design
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HM 4051/HM 9051: The High-Voltage, High-Sensitivity Unipolar Hall Sensor for Robust Industrial Design
T1635H-6I 16A 600V TRIAC | 150°C High-Temperature Snubberless Power Control for Motor & Heating Applications
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T1635H-6I 16A 600V TRIAC | 150°C High-Temperature Snubberless Power Control for Motor & Heating Applications
High-Temperature Industrial pH Glass Sensor (Immersion/Submersible Electrode)
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High-Temperature Industrial pH Glass Sensor (Immersion/Submersible Electrode)
MOS-Controlled Thyristor (MCT) | High-Voltage Fast Switching Power Device for Industrial & Aerospace Applications
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MOS-Controlled Thyristor (MCT) | High-Voltage Fast Switching Power Device for Industrial & Aerospace Applications
SFP2003 Super Fast Recovery Rectifier Diode: Fast, Ultra Fast & Fast Recovery Diodes Explained
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SFP2003 Super Fast Recovery Rectifier Diode: Fast, Ultra Fast & Fast Recovery Diodes Explained
Extreme close-up of a robotic arm precisely placing a semiconductor die during assembly at Jiangsu GuanLong. This mission-critical manufacturing process creates the high-fidelity MEMS and inertial sensors that form the backbone of modern infrastructure
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about us

Jiangsu GuanLong Integrated Technology Co., Ltd.

Jiangsu GuanLong Integrated Technology Co., Ltd. stands at the forefront of China's strategic electronics industry, operating as a premier designer and manufacturer of mission-critical technologies. We specialize in delivering advanced power semiconductors, cutting-edge radio frequency (RF) solutions, and high-fidelity MEMS and inertial sensors that form the technological backbone of modern defense, aerospace, and critical infrastructure systems.
  • Advanced Power & RF Semiconductors
    We develop the essential components that generate, control, and direct power and signals in high-stakes applications.
  • Precision MEMS & Inertial Sensors
    We provide the eyes and inner ears for autonomous and guided systems, ensuring precision and stability when it matters most.
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Experiences
  • Icon of a semiconductor wafer undergoing rigorous reliability testing, representing GL Chips' commitment to 1,000+ hours of exhaustive validation for mission-critical ICs
    1000 +
    Rigorously tested for 1,000+ hours
    under extreme conditions
  • Symbol of round-the-clock engineering support at GL Chips, depicted by a support icon overlapping a continuous timeline or globe, ensuring always-available expertise for production partners
    24/7
    24/7 engineering support
  • Illustration of a durable MEMS sensor operating in high-stress environments, symbolizing GL Chips' decade-plus of specialized expertise in extreme-condition semiconductor manufacturing
    10 +
    10 years experience in MEMS technologies
If you have any needs, please contact us
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LET'S DISCUSS YOUR PROJECT

Stay informed of the Group’s latest news and receive every month “So tubes!”, you will find all the news of the month: new contracts, projects, innovations…

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Why Choose Us

Jiangsu GuanLong Integrated Technology Co., Ltd. provides more than just world-class components; we deliver end-to-end partnership models designed to secure and accelerate our clients' most critical technology programs.

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Proven Reliability

Our sensors undergo 1,000+ hours of environmental stress testing (thermal, shock, vibration).

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Custom Solutions

Tailored MEMS designs for niche applications (Automated Guided Vehicle，consumer electronics etc).

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Equipments

In Our Group, we believe it is important for us to adapt to new equipment and technologies.

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End-to-End Support

From prototyping to mass production, with IP protection and fast NPI cycles.

Solutions

Application Scenarios

1. Rigorously tested for 1,000+ hours under extreme conditions (thermal cycling, 50G shock, 20–2000Hz vibration) to exceed industry benchmarks.

2. 24/7 engineering support

3. 10 years  experience in MEMS technologies

A high-performance Gallium Nitride (GaN) power transistor, the core component enabling high-speed motor drives. Its ultra-fast switching creates high-fidelity PWM signals for precise torque and speed control, resulting in smoother, quieter, and more efficient operation for drones and robotics

Gallium Nitride (GaN) Power Transistors

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A TVS diode integrated on a motor driver board, providing robust overvoltage protection to prevent damage from electrical transients, thereby enhancing the reliability and durability of industrial rotating equipment

TVS Diode Protection Solutions for Modern Electronics

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An array of compact MEMS accelerometers and gyroscopes mounted inside an autonomous test vehicle's data acquisition unit, logging precise vehicle dynamics data for performance and safety analysis

MEMS Sensor Array for Autonomous Vehicle Dynamics Logging

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A highly precise micro-pressure sensor with a digital display, installed inside a modern biosafety cabinet. Its real-time feedback system monitors air pressure differentials to ±0.1 Pa accuracy, ensuring containment integrity and elevating safety standards in high-risk research and pharmaceutical production

Precision at Work: The Micro-Pressure Sensor Revolutionizing Biosafety Monitoring

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News & Insights

COMPANY UPDATES, PRODUCT DEVELOPMENTS, AND TECHNICAL INSIGHTS FROM GLCHIPS, COVERING POWER SEMICONDUCTORS, MEMS SENSORS, AND ELECTRONIC COMPONENTS.
2026 3.3V TVS Diode Market News & Industry Insights2026 3.3V TVS Diode Market News & Industry Insights

2026 3.3V TVS Diode Market News & Industry Insi...

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This 2026 3.3V TVS Diode Selection Guide serves as a comprehensive technical reference for engineers, technical buyers, and procurement professio...
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Jul 08-2026
Designing a 150W USB-C PD Charger with 40V GaN Technology: Efficiency, Thermal, and Size AdvantagesDesigning a 150W USB-C PD Charger with 40V GaN Technology: Efficiency, Thermal, and Size Advantages

Designing a 150W USB-C PD Charger with 40V GaN ...

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Modern 150W USB-C Power Delivery chargers require high efficiency, compact size, and effective thermal management. Traditional silicon MOSFETs fa...
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Jun 04-2026
Why 40V GaN Transistors Are Replacing Silicon MOSFETs in Next-Generation DC-DC ConvertersWhy 40V GaN Transistors Are Replacing Silicon MOSFETs in Next-Generation DC-DC Converters

Why 40V GaN Transistors Are Replacing Silicon M...

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As modern electronic systems demand higher efficiency, smaller form factors, and increased power density, traditional silicon MOSFET technology i...
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Jun 04-2026